Abstract
Millimeter-Wave INnovation Technology Research Center (MINT), Dongguk University,Seoul 100-715, Republic of KoreaThe electrical characteristics of ITO/MEH–PPV (poly-[2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenyl-enevinylene])/ZnO/Al structure device were studied. I–V characteristics of the device show stablerectifying diode behaviour with large current. Based on this result, a carrier tunneling process mech-anism and injection and transport mechanism are suggested to explain the phenomenon. Theresults show that the MEH–PPV/ZnO thin film gives good performance and is relevant for applica-tions in optoelectronic such as a light-emitting diode.
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