Abstract
Different InP (p-type) epilayers grown by metalorganic chemical vapor deposition, with one-dimensional Mg-concentration gradients perpendicular to the growth plane, have been used to study the validity of an electrical-transport model that takes this type of nonuniformity into account, and includes both the scattering mechanisms present in semiconductors and interband transitions. Secondary-ion-mass-spectroscopy measurements have been performed to determine the Mg-concentration profiles of the samples, which were required for the computation of the theoretical mobilities and free-hole concentrations. Temperature-dependent Hall-effect measurements in the range of 4.2--300 K provided the corresponding experimental quantities, which were found in good agreement with theory over a wide temperature range.
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