Abstract
Here, a gated-anode diode (GAD) is proposed where an anode electrode is formed by connecting a gate electrode and an ohmic electrode of a normally-off GaN HEMT for a 5.8 GHz rectenna. A wide recessed gate GaN GADs were prepared and the recess length dependence of their electrical characteristics was investigated. Typical DC characteristics of the HEMTs are a threshold voltage (Vth) of +0.3 V and a maximum drain current (Imax) of 300 mA/mm. The GADs showed the characteristics of maximum forward current (If) of 350 mA/mm, reverse breakdown voltage (BVr) of 40 V, and off-state capacitance (Coff) of 0.28 pF/mm by using optimized recess length. We constructed SPICE model of the GADs. The SPICE simulation predicted a rectifier efficiency of 81% and a DC output power of 10 W for bridge type 5.8 GHz rectifier using four GADs with each gate width of 0.8 mm.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
