Electrical characteristics of GaIn(As)Sb layers grown by metal organic vapor phase epitaxy

Abstract

We report the electrical characteristics of GaInSb and GaInAsSb layers grown by metal organic vapor phase epitaxy (MOVPE) on GaSb and GaAs substrates versus the growth parameters as growth temperature and V/III ratio. The effect of initial growth process including GaSb or stepped buffers is also described. On bulk Ga 0.6In 0.4Sb layer grown with a stepped buffer layer, the best carrier density and mobility are 1.4 × 10 16 cm −3 and 454 cm 2 V −1 s −1, respectively. But the lower value (6.4 × 10 15 cm −3) than the previous one was obtained on a p/n structure containing a stepped buffer layer and a growth interruption between p- and n-layers. For the quaternary layer, the best results were obtained for samples grown outside the miscibility gap and close to the lattice matching.