Abstract
AbstractStructural and electrical properties of IMPATT diodes prepared from homoepitaxial GaAs films grown by liquid phase epitaxy have been investigated with the help of metallography and reverse I–V characteristic derivatives. The structural defects in epitaxial layers have been shown lead to the localization of current in separate regions (microplasmas) which brings up a soft breakdown. A method as been proposed for the observation of microplasmas at large currents.
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