Abstract
We have found excellent electrical characteristics of epitaxially grown SrTiO/sub 3/ by molecular beam epitaxy (MBE) for silicon metal-insulator-semiconductor (MIS) gate dielectric application. For thin SrTiO/sub 3/ film, the equivalent oxide thickness (EOT) and leakage current density was 5.4 /spl Aring/ and 7 /spl times/ 10/sup -4/ A/cm/sup 2/ (@V/sub g/ = V/sub fb/ - 1 V), respectively. In addition, the dispersion and hysteresis characteristics were negligible. As-deposited samples show relatively high fixed oxide charge density and interface state density, but both of these characteristics are substantially reduced by an optimizing low temperature (< 450 /spl deg/C) post-metal forming gas anneal (FGA).
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