Abstract
The characteristics of epitaxial γ-Al2O3 film deposited by molecular beam epitaxy (MBE) on a Si substrate have been studied for its application to quantum devices with different thicknesses. The epitaxial growth properties and surface morphology of the film were studied by in situ reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). Epitaxial γ-Al2O3 films on Si substrates with film thicknesses ranging from 2 to 10 nm exhibited an appropriate surface flatness. We observed that the epitaxial γ-Al2O3 films exhibit appropriate dielectric properties (6–12 MV/cm) and very low leakage currents. From the electrical characteristics, we observed Fowler–Nordheim (F–N) tunneling phenomena with a large band offset. The same properties in thick epitaxial γ-Al2O3 films may be suitable for quantum tunneling applications.
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