Electrical characteristics of Al/a-C:H/n-Si diodes using CH 4 and [formula omitted] as the gas source

Abstract

MIS diodes using as insulator a-C:H films, deposited by PECVD at room temperature with CH 4 and CH 4 CF 4 as gas source were electrically characterized. The film thickness of the a-C:H obtained from CH 4 CF 4 gas mixture is limited by high intrinsic compressive stress. The I vs V and C vs V diode curves show that films behave as undoped high resistivity layers; their typical resistivities are between 10 10 –10 12 ΩCM and the films also show the presence of slow and deep states. The MIS diodes fabricated using a CH 4 CF 4 gas mixture source exhibited a significant change in the reverse breakdown voltage.