Abstract
The electrical characteristics of nonvolatile memory, which consists of an asymmetrical ZrO 2/SiO 2 (ZO) modified tunnel barrier, a high-k HfO 2 trapping layer and an Al 2O 3 blocking layer, were investigated for the application of a tunnel barrier engineered nonvolatile memory at low process temperatures. The efficiency of the ZO modified tunnel barrier on the charge trap flash (CTF) memory cell was compared to a conventional single SiO 2 tunnel barrier. The ZO tunnel barrier revealed field sensitivity larger than the single SiO 2 tunnel barrier. The programming and erasing speeds as well as the retention and endurance characteristics of CTF memory were largely enhanced. Moreover, the forming gas annealing process in 2% diluted H 2/N 2 ambient improved the charging trapping property and tunneling sensitivity of the ZO modified tunnel barrier.
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