Abstract
A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of the device was no more than 19/spl mu/m. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and 100V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown finally occurred.
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