Electrical Characteristics of 8-nm SOI n-FinFETs

Abstract

This study is aimed at presenting the electrical characteristics of a nanoscale SOI n-channel fin field-effect transistor (FinFET) structure with 8 nm gate length using Al2O3 as the dielectric material and their sensitivity to the number of fins and fin-thickness with 3C-SiC material in the channel region. In this work, the numerical simulation tool Silvaco-Atlas is used to simulate the device in three-dimensions and to extract new results concerning the electrical characteristics of the device at room temperature (300 K) in comparison to earlier generations. The threshold voltage, subthreshold slope, transconductance, drain induced barrier lowering, leakage current, on-current, and On/Off current ratio are analyzed. Simulation results show that the higher drain current and transconductance are obtained by increasing the number of fins. The use of a higher value of gate dielectric constant can increase the drain current and improve the leakage current. It is found that reducing the fin-thickness is beneficial in reducing the subthreshold slope, drain induced barrier lowering, and leakage current. It should be highlighted that the achieved results can be useful for further manufacturing processes.