Abstract
Self-switching devices (SSDs) are new nano-scale field effect active components. In the present work, these devices are made in silicon-on-insulator (SOI) technology and operate at room temperature. We investigate their current–voltage ( I– V) characteristics which show a diode-like behaviour due to electrostatic effects. Thermal activation measurements are presented and discussed. We also present simulations to gain better understanding of device physics and also to optimize the critical parameters of the fabrication process.
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