Abstract
The recessed channel fin field-effect transistor (RC-FinFET) has been developed as a future DRAM cell transistor. A recess-channel structure is applied to the FinFET to form a RC-FinFET. A three series-connected transistor model is proposed to understand the electrical characteristics. The RC-FinFET is considered to be a serial connection of three transistors consisting of one bottom transistor and two vertical transistors. The electrical characteristics of the RC-FinFET are compared with the normal FinFET and recessed-channel-array transistor (RCAT). The short channel immunity of the RC-FinFET is better than the normal FinFET and RCAT.
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