Abstract
The effects of fluorine inclusion in the aluminum oxide tunnel barrier on the electrical characteristics and the interface structure of magnetic tunnel junctions were studied. Compared with conventional junctions without fluorine, the fluorine-containing junctions exhibit larger and nearly constant tunneling magnetoresistance (TMR) values over a wide range of oxidation times and exhibit a smaller bias dependence for TMR. X-ray photoelectron spectroscopy indicates that the fluorine forms an aluminum oxyfluoride barrier together with an oxygen and that the fluorine-rich oxyfluoride layer at the barrier top surface plays an important role in the formation of the highly insulating barrier, resulting in nearly ideal barrier/electrode interfaces without a detrimental magnetically dead layer.
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