Electrical characteristics and 2DEG properties of passivated InAlN/AlN/GaN HEMT

Abstract

In this paper, we report on InAlN/AlN/GaN High Electron Mobility Transistor (HEMT) having 0.25µm gate length with semi insulating SiC substrate. The Current-Voltage (I–V), intrinsic gate-source capacitance (C gs ) and gate-drain capacitance (C gd ) of InAlN/AlN/GaN HEMT characteristics are presented. By using the ATLAS device simulator from Silvaco, the characteristics behavior has been modeled. Due to the disruption in the conduction band at the heterointerface gives the two dimensional electron gas (2DEG) when the wide band gap material grown over the narrow bandgap material. This 2DEG transport properties of InAlN/GaN based HEMT model is presented with its consequence characteristics like 2DEG density and sheet resistances for assorted mole fractions. To conclude the capacitances and currents, the 2DEG charge density n s is evolved and employed. This paper clearly gives the simulated device electrical characteristics.