Abstract
Abstract Phosphorus-doped ZnO films were grown by pulsed laser deposition using a ZnO:P 2 O 5 -doped target as the phosphorus source with the aim of producing p-type ZnO material. ZnO:P layers (with phosphorus concentrations of between 0.01 to 1 wt%) were grown on a pure ZnO buffer layer. The electrical properties of the films were characterised from temperature dependent Hall-effect measurements. The samples typically showed weak n-type conduction in the dark, with a resistivity of 70 Ω cm, a Hall mobility of μ n ∼0.5 cm 2 V −1 s −1 and a carrier concentration of n∼3×10 17 cm −3 at room temperature. After exposure to an incandescent light source, the samples underwent a change in conduction from n- to p-type, with an increase in mobility and decrease in concentration for temperatures below 300 K.
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