Abstract
The effect of dielectric strengthening under electrical breakdown in thin oxide films and other materials is discussed. The breakdown phenomenon is considered as an insulator-to-metal phase transition. The effect of strengthening is thus associated with the fact that no phase transition seems to be possible when the system size is decreased below a certain characteristic length d c (it is a so-called ‘tachyon instability’). This dimension is estimated to be d c ∼ ξ, where ξ is the correlation length for metal–insulator transition.
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