Abstract
Current-voltage (I-V) curves for Al/fullerene (C60) nanoparticles embedded in poly(methylmethacrylate) (PMMA) layer/indium-tin oxide (ITO) organic bistable devices (OBDs) with an Al2O3 blocking layer showed a current bistability. The ON and OFF currents of the OBDs with an Al2O3 blocking layer at 1 V were 1 × 10−5 and 1 × 10−8 A, respectively, and their ON/OFF ratio is 1 × 103, which was much larger than those of the OBDs without an Al2O3 blocking layer. Write-read-erase-read characteristics showed that the OBDs exhibited wide-range current hysteresis, which could be used as rewritable nonvolatile memory cells. The endurance number of the ON/OFF switchings for the OBDs was above 5 × 104 cycles. The effect of the Al2O3 blocking layer on the Al/C60 nanoparticles embedded in PMMA layer/Al2O3/ITO device is described on the basis of the I-V results.
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