Abstract
The electrical behavior of the mobile hydrogen ions in the thermally grown SiO2 films were studied by using the C-V measurements, the thermally stimulated ionic current, and the avalanche injection techniques. It has been found that the hydrogen ions introduced into the thermally grown SiO2 films by water vapour or ethanol contamination are high mobility species under low electric field at room temperature. These mobile hydrogen ions can cause the instabilities of MOS structures at room temperature-bias. It has also been found that the mobile hydrogen ions located in the SiO2 films near the SiO2-Si interface may act as electron trap centers. In addition, the instabilities and electron trap centers due to the mobile hydrogen ions may be reduced by a low-pressure RF plasma annealing.
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