Abstract
The paper presents results of an investigation of the electrical properties of cubic boron nitride (c-BN) layers deposited onto silicon substrates by the reactive pulse plasma method. Current-voltage characteristics of the layers in metal/insulator/semiconductor (MIS) structures were investigated in a wide voltage range for films of various thicknesses, obtained under different technological conditions. On the basis of I-V measurements, the breakdown properties of BN layers were also evaluated. In spite of many similarities of c-BN films to diamond-like carbon films, we have found a slightly different character of electrical properties. In most cases we observed switching phenomena and voltage-controlled negative resistance. The dielectric strength of investigated layers shows a wide range of critical electric fields in the range 0.5–6.0 MV cm −1. An attempt to explain the observed effects on the basis of existing models, valid for similar materials, is also made.
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