Abstract
In this paper, electrical characterisation and analytical modelling of current-voltage ( I - V ) and capacitance-voltage ( C - V ) for Hg/InN/n-InP Schottky structures are investigated. We have studied electrically thin InN films realised by the nitridation of InP(100) substrates using a glow discharge source (GDS) in ultra high vacuum. So, we have calculated, using I - V and C - V measurements, the ideality factor n , the saturation current I s , the barrier height
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