Abstract
Large channel length field effect transistors (FETs) based on Pt contacts to ferromagnetic BiMn-codoped ZnO bicrystal nanobelts have been fabricated using dielectrophoresis and a focused ion beam. Electrical transport studies show n-type behavior of the ferromagnetic ZnO nanobelts. The current−voltage characteristics of the FETs exhibit Schottky barrier behavior. The contact resistances and the Pt diffusion are responsible for the reduction of the conductance and the threshold shift. The reduction of the mobility can be attributed to the enhanced interface scattering at Pt electrodes/nanobelt contact regions after Pt deposition. The devices are also found to be strongly dependent on the channel length.
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