Abstract
SiO2 addition effect on electrical behaviour against current impulse in the ZnO varistors was investigated. SiO2 acts as a controller in ZnO grain growth, decreasing the grain size of ZnO from 8.87 to 5.86 μm, which in turn results in an increase in breakdown voltage E1mA from 192.77 to 252.57 V/mm. SiO2 has a significant influence on the current energy withstand capability and impulse aging characteristics. The results indicated that the SiO2 content was optimized at 1.5 mol%, exhibiting the best energy withstand capability of 332.03J/cm3 and clamping ratio of 1.71.
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