Abstract
Sheet resistance and surface profiles of TiN (~10nm thick) capped, Ni films (~30nm thick) on (100) oriented p-type 300mm blanket Si wafers were measured using a conventional four point probe and WaferMasters' optical surface profilometer (OSP-300) system. Process induced surface profile changes were characterized and traced between process steps. Measurements were done after NiSi formation using WaferMasters SAO-300LP (stacked annealing oven) system and removal of the TiN capping layer and unreacted Ni layer by wet etching. Annealing of the NiSi formation was done in the temperature range of 200~425oC in N2 at 1 atmosphere for 5 min. Significant changes in wafer surface profile were observed near the phase transition (Ni/Si→Ni2Si→NiSi) temperatures as determined by the temperature sensitivity curve of sheet resistance. Wafer surface profiles became flatter after wet etching due to the release of build up between the TiN capping layer and the nickel silicide layer. The origin of the wafer distortion after annealing was found to be at the interface between the TiN capping layer and the silicide layer.
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