Abstract
Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range 20 °C - 120 °C are presented. The results show consistent performance among devices. Their leakage current density, at the highest investigated temperature (120 °C), is in the range of nA/cm(2) at high internal electric field. Properties such as barrier height and ideality factor are also computed as a function of temperature. The responsivities of the diodes as functions of applied voltage were measured using a UV spectrophotometer in the wavelength range 200 nm - 380 nm and compared with theoretically calculated values. The devices had a mean peak responsivity of 0.093 A/W at 270 nm and -15 V reverse bias.
Highlights
Ultraviolet (UV) photodetectors are used in a wide range of applications
Air and drinking water purification, chemical and biological analysis, industrial flame detection as well as UV sterilization of medical equipment [1,2,3]. They are employed in areas such as security, dermatology and inter-satellite and non-line-of-sight communications [1,4,5,6], with military applications including missile warning, missile plume sensing and combustion monitoring [1,5]
In this paper we report electrical and optical characterization of 4H-SiC Schottky UV detectors with nickel silicide (Ni2Si) interdigitated contacts
Summary
Ultraviolet (UV) photodetectors are used in a wide range of applications. Civil applications include food, air and drinking water purification, chemical and biological analysis, industrial flame detection as well as UV sterilization of medical equipment [1,2,3]. UV detectors based on wide bandgap semiconductor materials, such as SiC, can overcome many of those issues Due to their larger bandgaps, devices based on such materials can have dark currents orders of magnitude lower than silicon photodetectors of comparable design [3, 5], and they can operate at room temperature and above without cooling. Another advantage of SiC, for UV applications, is the intrinsic insensitivity (visible-blindness) to photons of energy < 3.2 eV (wavelength 380 nm). Responsivity measurements as a function of wavelength and applied bias are reported and examined
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