Abstract
Oxide-based thermoelectric materials such as BiCuSeO have been researched for several years to optimize their thermoelectric performance. In this article, we present a series of Zn-doped BiCuSeO ceramics produced by fine processing. The results indicate that Zn doping can effectively increase the power factor through Cu vacancies along with a suppressed thermal conductivity through increased phonon scattering at ZnSe impurity phase. Consequently, a higher ZT value of 0.65 at 873 K is obtained for 10% Zn doping, being about three times larger than that of the pure sample.
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