Electrical and thermal stability of Ag ohmic contacts for GaN-based flip-chip light-emitting diodes by using an AgAl alloy capping layer

Abstract

We have investigated Ag(200 nm)/AgAl(100 nm) ohmic contacts to p-type GaN for near-UV (405 nm) flip-chip light-emitting diodes (LEDs). It is shown that the use of an AgAl alloy capping layer (with 8 at% Al) results in better electrical and optical properties as compared to single Ag contacts when annealed at 430 °C. For example, Ag/AgAl (8 at% Al) contacts give specific contact resistance of 4.6×10 –4 Ω cm 2 and reflectance of 90% at a wavelength of 405 nm. However, use of an AgAl (with 50 at% Al) layer is not effective. LEDs fabricated with the Ag/AgAl (8 at% Al) reflectors produce higher light output as compared with the ones with single Ag reflectors. Ohmic mechanisms of the Ag/AgAl (8 at% Al) contacts are described and discussed.