Abstract
In this paper, the Nb-doped TiO2 films were deposited on glass substrate and their electrical and structural properties were investigated. The results revealed that the resistivity of Nb-doped TiO2 films of 0 at.%, 1 at.%, 3 at.%, 5 at.% and 7 at.% were 2.78 × 105, 1.35 × 105 Ω.cm, 5.89 × 104 Ω.cm, 9.20 × 102 Ω.cm and 9.56 × 103 Ω.cm, respectively. Where, the lowest resistivity of 9.20 × 102 Ω.cm was obtained at 5at.% Nb-doped TiO2 films. The resistivity of Nb-doped TiO2 films decreases as the Nb concentration increased from 0 at.% to 5 at.%. However, the resistivity decrease at 7 at.% Nb-doped TiO2 films. Meanwhile, from the FESEM images the Nb-doped TiO2 films with 0 at.%, 1 at.%, 3 at.% and 5 at.% Nb had a rough and porous structures were observed. However, the Nb-doped TiO2 at 7 at.% has a agglomerated and denser structures.
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