Abstract
We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta 2 O 5 gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta 2 O 5 film, the values of equivalent oxide thickness (EOT) and flat band voltage (V FB ) increase whilst the density of interfacial trap (D it ) gradually decreases. The effective metal work function (Φ m,eff ) of Pt metal gate, extracted from the relations of EOT versus V FB are calculated to be ∼5.29 eV, implying that Fermi-level pinning in Ta 2 O 5 gate dielectric is insignificant.
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