Electrical and structural properties of LiNbO3 films, grown by RF magnetron sputtering

Abstract

Nanocrystalline films of LiNbO3 on substrates (001)Si and (001)Si–SiO2 were synthesized by the method of RF magnetron sputtering. The elemental composition, structure of the LiNbO3 films, and also—electrical properties of heterostructures (001)Si–LiNbO3 and (001)Si–SiO2–LiNbO3 were studied. The dielectric constant of the LiNbO3 films calculated from the capacitance at the accumulation region was about 28. The resistivity was 1·109 ohm cm for films on (100)Si and 1.6·1011 ohm cm for films on (001)Si–SiO2. It has been determined that transmission of the current in the studied structures during direct biases is defined by hopping conduction, and, during reverse biases—by the Poole–Frenkel effect.