Abstract
Boron and phosphorus co-doped diamond films were prepared by ion implantation method. The correlation between the electrical and structural properties of the doped diamond films was investigated. Hall effect measurements indicate that the doped films are n-type conduction. The carrier concentrations of the samples are nearly equivalent while the Hall mobility and conductivity of B–P co-doped diamond films are higher than those of P-doped diamond films. EPR and Raman measurements indicate that the B–P co-doped diamond films have more compatible lattice structure than P-doped diamond films, which benefits to improve both the carrier mobility and conductivity of co-doped films.
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