Abstract
We correlate the structural properties of aluminium‐based dilute nitrides to their electrical properties. The effect of annealing on the carrier density and the mobility is measured on chemical beam epitaxy grown Al0.05Ga0.95N0.005As0.995 alloys. Both parameters increase with the annealing temperature due to the disappearance of N–C and N–H–VGa complexes. After annealing, a mobility of 60 cm2 V−1s−1 for a hole concentration of 1 × 1019 cm−3 are measured, which is similar to the values reported on GaAs with the same carrier concentration.
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