Abstract
The structure and effects of triangular-shaped defects in 4H-SiC junction barrier Schottky devices were investigated using I-V measurements, infrared microscopy, electron beam induced current, electroluminescence, and transmission electron microscopy. Thermal imaging of devices under reverse bias detected hot spots at the locations of triangular defects. Electroluminescence images determined the position of the leakage currents at the triangular defect sides near the p-n metallurgical junction. The triangular defects consist of macroscopic (1 μm thick) 3C-SiC platelets embedded in the 4H-SiC matrix.
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