Abstract
Intrinsic defects, including oxygen vacancies, can efficiently modify the electrochemical performance of metal oxides. There is, however, a limited understanding of how vacancies influence charge storage properties. Here, using tungsten oxide as a model system, an extensive study of the effects of structure, electrical properties, and charge storage properties of oxygen vacancies is carried out using both experimental and computational techniques. The results provide direct evidence that oxygen vacancies increase the interlayer spacing in the oxide, which suppress the structural pulverization of the material during electrolyte ion insertion and removal in prolonged stability tests. Specifically, no capacitive decay is detected after 30000 cycles. The medium states and charge storage mechanism of oxygen-deficient tungsten oxide throughout electrochemical charging/discharging processes is studied. The enhanced rate capability of the oxygen-deficient WO3- x is attributed to improved charge storage kinetics in the bulk material. The WO3- x electrode exhibits the highest capacitance in reported tungsten-oxide based electrodes with comparable mass loadings. The capability to improve electrochemical capacitance performance of redox-active materials is expected to open up new opportunities for ultrafast supercapacitive electrodes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
