Electrical and structural characterization of implantation doped silicon by infrared reflection

Abstract

Abstract A physical model is presented for calculating infrared reflection interference spectra from ion implanted and annealed crystalline materials. The utility of the method is illustrated by presenting best fit spectra for a <111> silicon sample implanted with 2.7 MeV phosphorous to a fluence of 1.74 × 1016 ions/cm2 and isothermally annealed at 500°C. Non-linear least-squares fitting of reflection data yields structural and electrical information about the implanted region with reasonable precision. The physical quantities determined are (i) the depth of the amorphous layer produced by implantation both before and during isothermal annealing, the thickness of the recrystallized material, and the widths of any transition regions, (ii) the dielectric properties of the amorphous and recrystallized material, and (iii) the characteristics of the free carrier plasma which yield the carrier density profile, the mobility near the carrier density maximum, and the carrier activation efficiency. Up to nine fitting parameters are necessary to describe these physical quantities. A critical discussion of the sensitivity of data fit to variation in the parameters is given to establish the uniqueness of fitted parameters. The infrared method is non-destructive, is applicable to other dopants and semiconductors, and provides information complementary to both ion channeling and resistivity profiling techniques.