Abstract
In this study, surface-channel MOSFETs processed on strained-Si on relaxed Si1-xGex virtual substrates feature significantly enhanced carrier mobility (64% for electrons and 45% for holes) than that of the bulk-Si control devices. The drain current of the strained-Si nMOSFET increases by 45% compared to 4.5% in strained-Si pMOSFET. The strained-Si pMOSFETs surface roughness scattering begins to dominate at a relatively low effective field (~0.2 MV/cm) that accordingly limits the drive current enhancement of strained-Si pMOSFETs. Furthermore, experimental data indicates that hot carrier and negative bias temperature instability are a potential reliability concern for strained-Si nMOSFETs and pMOSFETs, respectively.
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