Abstract
Polyacetylene is doped in hydrogen bromide (HBr) or hydrogen iodide (HI) solution. The stability of solution-doped polyacetylene is compared with that of I 2-doped polyacetylene in accordance with the change in conductivity due to heat treatment and exposure in air. The HBr(HI)-doped polyacetylene is more stable than the I 2-doped one. The performance of an Al| cis-[CH(HBr) y] x of [CH(HI) y] x|Au Schottky barrier solar cell and the stability of the cell parameters are also investigated. It is found that a lower light intensity results in a higher conversion efficiency, and the Al|HBr(HI) solution-doped (CH) x|Au cell is more stable than the Al|I 2-doped (CH) x|Au cell in an argon environment. The maximum conversion efficiencies are 0.9% and 1.3% for Al|cis-[CH(HBr) y] x|Au and Al|cis-[CH(HI) y] x|Au Schottky barrier solar cells, respectively.
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