Abstract
SiGe nano-size islands play a key role in novel electronic and optoelectronic devices. Therefore, the understanding of basic electrical properties of individual nanoislands is crucial. Here, the electrical and photovoltaic properties of individual self-assembled Ge nanodomes (NDs) on Si(001) have been studied by conductive and photoconductive atomic force microscopy (AFM). The transition areas between the {113} and {15 3 23} facets turned out to be most conductive whereas the {113} facets exhibit minimum conductivity, which is attributed to a local increase in Si concentration. Local current-to-voltage measurements revealed that the NDs show an ohmic resistance, which is in the M\ensuremath{\Omega} region and scales with the ND-substrate interface area. Upon illumination by the AFM feedback laser at 860 nm, a photovoltage is generated. This photovoltage originates in the $p$-$i$-$n$ structure formed between the $p$-type substrate, the Ge ND, and the $n$-type diamond AFM probe.
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