Abstract
Abstract The p-Si/n-ZnO:La heterojunctions were obtained using different dopant levels (0.2, 0.4, 0.6, 0.8 and 1%) nanostructured ZnO films. To characterize the electrical behavior of these structures, the current-voltage (I-V) analysis were performed. It was observed that all of them showed good rectifying behavior. The diode parameters were determined by using different methods. To characterize the photovoltaic behavior of these diodes, I-V measurements were performed under illuminations (20–100 mW/cm2). The results indicated that obtained photodiode exhibited a good photoconducting behavior.
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