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Abstract
Ni doped nanocrystalline Bi2S3 thin films are chemically deposited on Fluorine Doped Tin Oxide (FTO) substrate from the solution containing Ni(NO3)2, Bi(NO3)3.5H2O, C6H15NO3 and CH2CS.NH2 at deposition temperature 318K. The Current–voltage (I–V) characteristics of the junctions are measured in the temperature range 300–340K and junction parameters are calculated. The ideality factor (n) and barrier height (ϕb) at different temperature are found to vary from 4.7 to 3.8 and 0.74 to 0.79 respectively. It is observed that the ideality factor decreases while the barrier height increases with increase of temperature. The calculated junction parameters are strongly temperature dependent. The discrepancy between the barrier height obtained from capacitance–voltage (C–V) and current–voltage (I–V) characteristics is analyzed. The carrier concentration determined from the C–V plot is found to be of the order 1017/cm3.
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