Electrical and photoelectrical characteristic investigation of a new generation photodiode based on bromothymol blue dye

A Gencer Imer,A Korkut,A Tombak

doi:10.1088/1742-6596/707/1/012012

A Gencer Imer, A Korkut + Show 1 more

Open Access

https://doi.org/10.1088/1742-6596/707/1/012012

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Abstract

Bromothymol blue (BTB) with the molecular formula of C27H28Br2O5S was grown onto p-Si substrate to fabricate heterojunction by spin coating technique. The current voltage (I-V) measurements of diode were carried out in dark and under different illumination intensity at room temperature. The photoelectrical properties of heterojunction based on BTB were investigated using the illumination intensity dependent I-V data. The results showed that photo current of diode increases with the increase in light intensity. Also, the electrical parameters of device were determined via I-V, and capacitance- voltage (C-V), conductance-voltage (G-V) measurements at different frequencies. It is observed that the excess capacitance is created at low frequencies due to the contribution of interface states charge which can follow the alternative current signal to capacitance. It is stated that, both the electrical & photoelectrical parameters of diode can be changed, and also the performance of the device could be affected by the organic thin film interlayer.

Highlights

The organics or molecular materials have a wide variety of applications in modern electronic technology owing to structural flexibility, lower production cost, easy of synthesis and the possibility of using for large area device production [1,5]
The organic thin films can be deposited onto different kind of substrates via deep coating [6], spray pyrolysis [7], spin coating [8,9,10,11,12,13], which are very common and cost effective growing methods
For the synthesis of Bromothymol blue (BTB) thin films, bromothymol blue was dissolved in methanol, and the precursor solution of 1x10-2 molL-1 BTB was prepared at fist

Summary

Introduction

The organics or molecular materials have a wide variety of applications in modern electronic technology owing to structural flexibility, lower production cost, easy of synthesis and the possibility of using for large area device production [1,5]. Ocak [16], and Güllü [17,18] have reported the value of barrier height for the organic inorganic heterojunction devices can be modified by the organic interlayer at the MS interface owing to the tunneling effect through the organic interlayer.

Results

Conclusion