Abstract
Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10–2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.
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