Abstract
ABSTRACT The basic photoelectric properties of photodeposited a-Se films are reported. Using the coplanar cell configuration, the dark and photo-excited DC currents were measured under steady state conditions. The resistivity at 295 K is about 1010Ωcm and the traps limited schubweg is 5 × 10−7cm2/V. The peak photore-sponse was obtained at 3·2eV with an associated resistivity of 5 × 109Ωcm. Several photoelectrical parameters of crystallized a-Se films were also measured. In general, the electrical transport parameters are similar to some of the results given in the literature for vacuum-deposited a-Se films. The study results suggest an energy band gap of 2·1 ±0·1 eV.
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