Abstract
A p-Si/n+-6H-SiC heterojunction non-ultraviolet photodiode is fabricated on 6H-SiC substrate. Non-UV light operation of the SiC devices is initially realised. J-V measurement indicates that the heterojunction has good rectifying behaviour with a turn-on voltage of ∼1 V. Under non-UV light illumination of 0.6 W/cm2, the device exhibits good photo-response with a maximum open circuit voltage Voc of 92.0 mV and photocurrent Iph of 0.6 mA/cm2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
