Abstract
Solar cells based on SnO2/Cd0.4Zn0.6S/CdTe heterostructures are fabricated by electrochemical deposition, and the dependences of their electrical and photoelectric properties on the thermal annealing conditions are studied. It is shown that thermal annealing reduces the tunnel currents by almost two orders of magnitude. The best conditions of thermal annealing are determined (t = 300°C and τ = 9 min). These conditions provide the highest photosensitivity of the heterostructures under study (Isc ≈ 21.2 mA/cm2, Uoc ≈ 813 mV, and η = 14.7%).
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