Abstract
Thin films of pure and silver-doped CdSe deposited by vacuum evaporation on Corning glass substrates in the temperature range 303–648 K were polycrystalline in nature with zincblende structure. The electrical conductivity of the films was in the range 1.3–12Ω −1 cm −1 and 4–6Ω −1 cm −1 respectively for the pure and silver-doped films. After the films were baked in air, the dark conductivity decreased because oxygen is incorporated as an acceptor impurity in the films. The asdeposited films were not photosensitive. The photosensitivity increased with increase in the baking temperature. The highest photosensitivities were 2.4 × 10 2 and 3.6 × 10 3 respectively for the pure and silver-doped films baked in air at 648 K. The photoconductive spectral response peak was shifted towards longer wavelengths for the silver-doped films. The trap depths evaluated from thermally stimulated currents are in agreement with the results obtained from the electrical conductivity.
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