Abstract
The optical and electrical properties are investigated of Nb doped ZnO (ZnO:Nb) thin films deposited by r.f. magnetron co-sputtering on glass substrates at different temperatures, Ts, between 50 °C and 500 °C. The optical transmittance and reflectance spectra are measured and used to determine the optical band gap. The values of the optical band gap are in the range 3.29- 3. 44 eV and are typical for ZnO thin films. The films have about 90 % transparency, while their resistivity increases in the range of 2.2×10 −3 Ω cm - 6.4×10 2 Ω cm as Ts is raised. The results demonstrate the potential of using Nb-doped ZnO films as a transparent conductive oxide in thin films solar cells and various optoelectronic devices.
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