Abstract
Diluted magnetic semiconductor epitaxial thin films of Zn 1 − x Mn x O have been grown on c-sapphire by the MOCVD technique. Variations of a and c lattice parameters follow Vegard's law and attest to the incorporation of substitutional Mn 2+ ions. Carrier concentration (n-type) and electron mobility were studied versus temperature for different concentrations of manganese. Incorporation of manganese leads to the opening of the band gap, observed as a blue shift in energy regarding pure ZnO.
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