Abstract
Antimony-doped tin oxide thin films, with a target composition ranging from 0 to 8wt.% of Sb2O3 content, were deposited on polyimide (PI) substrates by r.f. bias sputtering. Structural, electrical and optical properties of these films were studied by varying the bias voltage. It was found that the best films with a resistivity as low as 1.8×10−3Ωcm and an average transmission above 70% in the visible region can be obtained with a Sb2O3 target content of 6wt.% and substrate temperature of 200°C, and these performances corresponds to the highest crystallinity level.
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