Abstract
The electrical and optical properties of defects due to ion implantation of ruthenium in silicon have been studied by means of junction space-charge techniques. Two energy levels were observed with energy positions at Ec−0.184 eV (A-level) and EV+0.265 eV (B-level), respectively, at 77 K. The changes in enthalpy due to the capture of electrons and holes were −8 meV (A-level) and 1 meV (B-level). Gibb’s free energies at different temperatures were calculated for both levels. Good agreement with the corresponding optical threshold energy was found for the B-level suggesting a small Frank–Condon shift. A tentative model for the origin of the observed defects is discussed.
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